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4A High Speed Low Side Gate Driver Circuit Diagram


This is the simple 4A High-Speed Low-Side Gate Driver Circuit Diagram. The UCC27518 and UCC27519 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27518 and UCC27519 are capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17 ns.

The UCC27518 and UCC27519 provide 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V. The UCC27518 and UCC27519 are designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of -40°C to 140°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range.

4A High-Speed Low-Side Gate Driver Circuit Diagram
 
Circuit Project: 4A High-Speed Low-side Gate Driver
Features
  • Low-Cost, Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
  • Pin-to-Pin Compatible With TI’s TPS2828 and the TPS2829
  • 4-A Peak Source and 4-A Peak Sink Symmetrical Drive
  • Fast Propagation Delays (17-ns typical)
  • Fast Rise and Fall Times (8-ns and 7-ns typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (ensures glitch free operation at power-up and power-down)
  • CMOS Input Logic Threshold (function of supply voltage with hysteresis)
  • Hysteretic Logic Thresholds for High Noise Immunity
  • EN Pin for Enable Function (allowed to be no connect)
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of -40°C to 140°C
  • 5-Pin DBV Package (SOT-23)
Device Uses
  • Switch-Mode Power Supplies
  • DC-to-DC Converters
  • Companion Gate Driver Devices for Digital Power Controllers
  • Solar Power, Motor Control, UPS
  • Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)



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